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Metal-Insulator Transition and Pseudogap in Bi$_{1.76}$Pb$_{0.35}$Sr$_{1.89}$CuO$_{6+\delta}$ High-$T_c$ Cuprates

机译:金属绝缘体转变与pseudogap   Bi $ _ {1.76} $ pb $ _ {0.35} $ sr $ _ {1.89} $ CuO $ _ {6+ \ delta} $ High- $ T_c $ Cuprates

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摘要

It is inferred from bulk-sensitive muon Knight shift measurement for aBi$_{1.76}$Pb$_{0.35}$Sr$_{1.89}$CuO$_{6+\delta}$ single-layer cuprate thatmetal-insulator (MI) transition (in the low temperature limit, $T\rightarrow0$)occurs at the critical hole concentration $p=p_{\rm MI}=0.09(1)$, where theelectronic density of states (DOS) at the Fermi level is reduced to zero by thepseudogap irrespective of the N\'eel order or spin glass magnetism.Superconductivity also appears for $p>p_{\rm MI}$, suggesting that this featureis controlled by the MI transition. More interestingly, the magnitude of theDOS reduction induced by the pseudogap remains unchanged over a wide dopingrange ($0.1\le p\le0.2$), indicating that the pseudogap remains as a hallmarkof the MI transition for $p>p_{\rm MI}$.
机译:它是通过对金属绝缘子aBi $ _ {{1.76} $ Pb $ _ {0.35} $ Sr $ _ {1.89} $ CuO $ _ {6+ \ delta} $单层铜酸盐的体积敏感的μ子Knight位移测量得出的。 (MI)跃迁(在低温极限下,$ T \ rightarrow0 $)发生在临界空穴浓度$ p = p _ {\ rm MI} = 0.09(1)$处,其中费米的态电子密度(DOS)无论是N''el阶还是自旋玻璃磁性,都可以通过pseudogap将其水平降低为零。对于$ p> p _ {\ rm MI} $,也出现超导性,表明该特征受MI跃迁控制。更有趣的是,伪间隙引起的DOS减小的幅度在很宽的掺杂范围内($ 0.1 \ le p \ le0.2 $)保持不变,这表明伪间隙仍然是$ p> p _ {\ rm MI的MI转变的标志} $。

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